|Judul||:||ELECTRICAL PROPERTIES TEST OF DIELECTRIC CONSTANT AND IMPEDANCE CHARACTERISTIC THIN FILMS OF LiTaO3 AND 10% Ga2O3 DOPED LiTaO3|
This study aims to investigatedielectric constant and impedance characteristic of thin films made from LiTaO3 without (0%) and with doping (10%) Ga2O3. The solubility of LiTaO3 for the purpose of this study is regulated at 1 M by using 2-methoxyethanol [(CH3OCH2CH2OH)] as solvent. The growth of thin films on 7059 corning glass substrate was processed by Chemical Solution Deposition (CSD) method. By using a spin coater device on a speed of 3000 rpm for 30 seconds, the substrate is then annealed in furnace at a temperature of 550 oC for eight hours. To create aluminum contacts, the thin films were then further processed by involving Metal Organic Chemical Vapor Deposition (MOCVD) technique. The final thin films weremeasured by LCR meter to provide certain data such as: inductance, capacitance and resistance values in range frequency from 50 Hz to 5 MHz. The study concludes that the film thickness (made from LiTaO3 without (0%) and with doping (10%) Ga2O3) as separator material between two aluminum contacts that embedded on 7059 corning glass substrate was affected not only by dielectric constant but also by magnitude of impedance that contributes to providing information about ionic phenomenon.
|Tahun||:||2017||Media Publikasi||:||Jurnal Internasional|
|Kategori||:||Jurnal||No/Vol/Tahun||:||12 / 12 / 2017|
|PTN/S||:||Universitas Pakuan||Program Studi||:||TEKNIK KOMPUTER (D3)|
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