Repository Universitas Pakuan

Detail Karya Ilmiah Dosen

Agus Ismangil

Abstrak : Growth of Ba0.5Sr0.5TiO3 (BST) 1 M thick films are conducted with variation of annealing hold time of 8 hours, 15 hours, 22 hours, and 29 hours at a constant temperature of 850 0C on p-type Si (100) substrate using sol-gel method then followed by spin coating process at 3000 rpm for 30 seconds. The BST thick film electrical conductivity is obtained to be 10-5 to10-4 S/cm indicate that the BST thick film is classified as semiconductor material. The semiconductor energy band gap value of BST thick film based on annealing hold time of 8 hours, 15 hours, 22 hours, and 29 hours are 2.58 eV, 3.15 eV, 3.2 eV and 2.62 eV, respectively. The I-V photovoltaic characterization shows that the BST thick film is potentially solar cell device, and in accordance to annealing hold time of 8 hours, 15 hours, 22 hours and 29 hours have respective solar cell energy conversion efficiencies of 0.343%, 0.399%, 0.469% and 0.374%, respectively. Optical spectroscopy shows that BST thick film solar cells with annealing hold time of 8 hours, 15 hours, and 22 hours absorb effectively light energy at wavelength of ≥ 700 nm. BST film samples with annealing hold time of 29 hours absorb effectively light energy at wavelength of ≤ 700 nm. The BST thick film refraction index is between 1.1 to 1.8 at light wavelength between ±370 to 870 nm. Keywords: Ferroelectric material, BST, solar cells, band gap energy, solar cell efficiency
Tahun : 2014 Media Publikasi : Jurnal Internasional
Kategori : Jurnal No/Vol/Tahun : 24 / 34 / 2014
ISSN/ISBN : 978-602-5614-35-4
PTN/S : Universitas pakuan Program Studi : ILMU KOMPUTER
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